Growth and scintillation properties of Pr Doped (Gd,Y) 3(Ga,Al) 5O 12 single crystals

Kei Kamada, Takayuki Yanagida, Jan Pejchal, Martin Nikl, Takanori Endo, Kousuke Tsutsumi, Yutaka Fujimoto, Akihiro Fukabori, Akira Yoshikawa

研究成果: Article査読

8 被引用数 (Scopus)


Pr: (Gd,Y) 3(Ga,Al) 5 O 12 single crystals were grown by the μ-PD method with RF heating system. Pr 3+ 5d-4f emission within 300-350 nm, Pr 3+ 4f-4f emission within 480-650 nm and Gd 3+ 4f-4f emission at 310 nm are observed in Pr: (Gd,Y) 3(Ga,Al) 5 O 12 crystals. In order to determine light yield, the energy spectra were measured under 662 keV γ-ray excitation 137 Cs source), detected by a PMT H6521 (Hamamatsu). The light output of Pr1%:Gd 1 Y- 2Ga 3Al 2O 12 sample was of about one fifth of that of the Cz grown Pr:LuAG standard sample, i.e., around 4,000 photon/MeV. Two component scintillation decay shows the decay times (intensity) of 5.7 ns(5%), 38.7 ns (31%) and 187 ns (63%) using the PMT and digital oscilloscope TDS5032B detection.

ジャーナルIEEE Transactions on Nuclear Science
5 PART 2
出版ステータスPublished - 2012

ASJC Scopus subject areas

  • 核物理学および高エネルギー物理学
  • 原子力エネルギーおよび原子力工学
  • 電子工学および電気工学


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