Growth and optical properties of Lu3(Ga,Al)5O12 single crystals for scintillator application

Hiraku Ogino, Akira Yoshikawa, Martin Nikl, Jiri A. Mares, Jun ichi Shimoyama, Kohji Kishio

研究成果: Article査読

49 被引用数 (Scopus)

抄録

Effect of Ga substitution in a (Ce,Lu)3Al5O12 scintillator was examined at the crystals grown by the micro-pulling down(μ-PD) method. Strong suppression of unwanted host luminescence due to an exciton localized around Lu-Al antisite defect was observed even at the Ga concentration of 10 mol%. Less-intense slower components in scintillation decay were obtained upon increasing the amount of Ga. While the radioluminescence intensities of the 5d-4f luminescence of Ce3+ were not strongly changed, light yield was increased by Ga substitution. The 20% Ga-substituted sample showed even higher light yield than typical Czochralski-grown Ga-free LuAG:Ce.

本文言語English
ページ(範囲)908-911
ページ数4
ジャーナルJournal of Crystal Growth
311
3
DOI
出版ステータスPublished - 2009 1 15

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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