The dislocation velocity and mechanical strength of the GeSi alloys were investigated by the etch pit technique and compressive deformation tests, respectively. In the GeSi alloys of the composition range 0.004<x<0.080 the dislocation velocity first increases and then decreases with decreasing Si content in the temperature range 450-700 °C and the stress range 3-24 MPa. In contrast, the composition range 0.94<x<1 the dislocation velocity first increases and then decreases with decreasing Si content in the temperature range 750-850 °C and the stress range 3-30 MPa. The velocity dislocations was determined as functions of stress and temperature. The yield stress of the GeSi alloys is dependent on the composition, being proportional to a x(1-x).
|ジャーナル||Journal of Materials Science: Materials in Electronics|
|出版ステータス||Published - 1999|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering