We have studied interface phase stability of the BaFe12O 19 (BaM) thin films grown by molecular beam epitaxy on SiC(0001). The films were epitaxially grown with the following crystallographic relation: BaM(0001)∥SiC(0001) and BaM(11-20)∥SiC(11-20). High resolution TEM reveals the existence of two interfacial bands with different structure than BaM. The first band close to SiC is SiOx while the second has spinel structure and chemically corresponds to Fe3O4. These findings suggest that at initial growth stages Fe3O4 is more favorable than BaM. Density functional theory modeling of the phase stability of BaM compared to Fe3O4 shows that BaM is only stable at high oxygen partial pressures.
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