HfO2 films were fabricated by MOCVD from Hf(OC(CH3)2CH2OCH3)4. The addition of oxygen to the Hf precursor during deposition leads to oxidation of Hf(MMP)4 and the release of H2O, and organic byproducts. These impurities lead to degradation of the electrical properties for the HfO2 film. In situ remote-plasma oxidation effectively reduced the presence of impurities in the HfO2 and achieves the successful deposition of HfO2 films that have lower values for leakage current.
|ジャーナル||Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films|
|出版ステータス||Published - 2003 7月|
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