Growth and effects of remote-plasma oxidation on thin films of HfO2 prepared by metal-organic chemical-vapor deposition

Kazuhiko Yamamoto, Masayuki Asai, Sadayoshi Horii, Hironobu Miya, Masaaki Niwa

研究成果: Article査読

9 被引用数 (Scopus)

抄録

HfO2 films were fabricated by MOCVD from Hf(OC(CH3)2CH2OCH3)4. The addition of oxygen to the Hf precursor during deposition leads to oxidation of Hf(MMP)4 and the release of H2O, and organic byproducts. These impurities lead to degradation of the electrical properties for the HfO2 film. In situ remote-plasma oxidation effectively reduced the presence of impurities in the HfO2 and achieves the successful deposition of HfO2 films that have lower values for leakage current.

本文言語English
ページ(範囲)1033-1037
ページ数5
ジャーナルJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
21
4
DOI
出版ステータスPublished - 2003 7月
外部発表はい

ASJC Scopus subject areas

  • 凝縮系物理学
  • 表面および界面
  • 表面、皮膜および薄膜

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