Growth and characterization of short-period silicon isotope superlattices

Yasuo Shimizu, Kohei M. Itoh

研究成果: Article査読

21 被引用数 (Scopus)

抄録

We report molecular beam epitaxy (MBE) growth of silicon isotope superlattices (SLs) composed of alternating layers of isotopically enriched 28Si and 30Si. In this work, we have prepared short-period 28Sin/30Sin isotope SLs, where n is the number of atomic monolayer, with n = 1, 2, 3, 4, and 7. Zone-folded optical phonon frequencies due to artificial mass periodicity in the growth direction have been observed by Raman spectroscopy. We have used planar bond-charge model to calculate the frequencies. We found that the frequencies of the observed Raman shift agree well with those of optical phonon modes calculated for each SL structure. A detailed analysis revealed that the degree of intermixing between adjacent layers for our condition is approximately two monolayers.

本文言語English
ページ(範囲)160-162
ページ数3
ジャーナルThin Solid Films
508
1-2
DOI
出版ステータスPublished - 2006 6月 5
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 表面および界面
  • 表面、皮膜および薄膜
  • 金属および合金
  • 材料化学

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