Growth and characterization of semipolar InGaN/GaN multiple quantum wells and light-emitting diodes on (101̄1̄) GaN templates

Arpan Chakraborty, T. Onuma, T. J. Baker, S. Keller, S. F. Chichibu, S. P. DenBaars, S. Nakamura, J. S. Speck, U. K. Mishra

研究成果: Conference contribution

抄録

InGaN/GaN MQW samples were grown by metal organic chemical vapor deposition (MOCVD) on (101̄1̄) oriented GaN templates. Effects of growth temperature and reactor pressure on the photoluminescence (PL) properties were investigated. The emission intensity improved significantly when the QWs were grown at 100 Torr, compared to higher pressure growths. The effect of well-width on the luminescence properties was investigated and an optimum well width of 40 A was determined. Excitation dependent PL measurements revealed no shift in the PL emission wavelength suggesting the absence of electric field in the quantum wells. Furthermore, LEDs fabricated on (101̄1̄) GaN templates, emitting at 439 nm, showed no shift in the EL emission wavelength with the increase in drive current, reconfirming the absence of polarization.

本文言語English
ホスト出版物のタイトルProgress in Semiconductor Materials V - Novel Materials and Electronic and Optoelectronic Applications
ページ231-236
ページ数6
出版ステータスPublished - 2006 8月 23
外部発表はい
イベント2005 MRS Fall Meeting - Boston, MA, United States
継続期間: 2005 11月 282005 12月 2

出版物シリーズ

名前Materials Research Society Symposium Proceedings
891
ISSN(印刷版)0272-9172

Other

Other2005 MRS Fall Meeting
国/地域United States
CityBoston, MA
Period05/11/2805/12/2

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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