InGaN/GaN MQW samples were grown by metal organic chemical vapor deposition (MOCVD) on (101̄1̄) oriented GaN templates. Effects of growth temperature and reactor pressure on the photoluminescence (PL) properties were investigated. The emission intensity improved significantly when the QWs were grown at 100 Torr, compared to higher pressure growths. The effect of well-width on the luminescence properties was investigated and an optimum well width of 40 A was determined. Excitation dependent PL measurements revealed no shift in the PL emission wavelength suggesting the absence of electric field in the quantum wells. Furthermore, LEDs fabricated on (101̄1̄) GaN templates, emitting at 439 nm, showed no shift in the EL emission wavelength with the increase in drive current, reconfirming the absence of polarization.