Growth and characterization of InAsN alloy films and quantum wells

M. Kuroda, A. Nishikawa, R. Katayama, K. Onabe

研究成果: Conference article査読

32 被引用数 (Scopus)

抄録

Bulk InAsN films and monolayer-InAsN/GaAs single quantum wells (SQWs) have been grown on GaAs(0 0 1) substrates at 500 °C or below by RF-plasma-assisted molecular beam epitaxy (RF-MBE). Bulk InAsN films with fairly uniform compositions as revealed by X-ray diffraction have been successfully obtained up to the N concentration as high as 5.48%. The N incorporation is enhanced with decreasing growth temperature as expected for the metastable alloy. The Burstein-Moss effect is dominant for the optical properties near the band edge in the bulk InAsN films, giving a blue-shift of absorption edge due to the degenerate electrons in the conduction band. In the InAsN/GaAs SQWs, however, the BM effect is well suppressed to show the red-shift of photoluminescence (PL) peak energy due to the bandgap narrowing with the N incorporation, which is the manifestation of the huge bandgap bowing commonly found in the III-V-N-type alloys. This interpretation is justified when the difference in the shape of the density-of-states (DOS) function between the bulk and SQW is properly taken into account.

本文言語English
ページ(範囲)254-258
ページ数5
ジャーナルJournal of Crystal Growth
278
1-4
DOI
出版ステータスPublished - 2005 5 1
イベント13th International Conference on Molecular Beam Epitaxy -
継続期間: 2004 8 222004 8 27

ASJC Scopus subject areas

  • 凝縮系物理学
  • 無機化学
  • 材料化学

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