Growth and characterization of Ga1-xCrxN with high Cr content grown on ZnO templates

J. J. Kim, H. Makino, P. P. Chen, T. Suzuki, D. C. Oh, H. J. Ko, J. H. Chang, T. Hanada, T. Yao

研究成果: Conference article査読

14 被引用数 (Scopus)

抄録

We have grown Ga1-xCrxN epilayer films with high Cr content up to 10.1% on ZnO templates. The c-axis lattice constant is systematically contracted with increasing Cr content according to high resolution X-ray diffraction measurement. We have observed the coexistence of ferromagnetic and paramagnetic components in Ga1-xCrxN. Magnetic measurements have shown that the paramagnetic component is increased with increasing Cr content.

本文言語English
ページ(範囲)2869-2873
ページ数5
ジャーナルPhysica Status Solidi C: Conferences
7
DOI
出版ステータスPublished - 2003 12 1
イベント5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, Japan
継続期間: 2003 5 252003 5 30

ASJC Scopus subject areas

  • 凝縮系物理学

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