TY - JOUR
T1 - Growth and characterization of cubic InGaN epilayers on 3C-SiC by RF MBE
AU - Kitamura, T.
AU - Cho, S. H.
AU - Ishida, Y.
AU - Ide, T.
AU - Shen, X. Q.
AU - Nakanishi, H.
AU - Chichibu, S.
AU - Okumura, H.
PY - 2001/7/1
Y1 - 2001/7/1
N2 - We successfully grew cubic InGaN epilayers having the InN molar fraction up to 20% on 3C-SiC (0 0 1) substrates by radio frequency N2 plasma molecular beam epitaxy. Cubic InGaN epilayers of 200 nm thickness on cubic GaN were found to be strained by high resolution X-ray diffraction (XRD) reciprocal space measurement. On the other hand, 450 nm thick cubic InGaN epilayers on cubic GaN were fully relaxed. The photoluminescence (PL) emission from the cubic InGaN epilayers was clearly observed at room temperature. The energy of the PL emission was decreased nonlinearly with the increase of InN molar fraction, and that of a In0.20Ga0.80N epilayer was as low as 2.1 eV. We also attempted to fabricate cubic InGaN/GaN multiple quantum well structures. Several satellite peaks of the superstructure were observed by XRD, which indicates the excellent quality of superstructure and hetero-interface.
AB - We successfully grew cubic InGaN epilayers having the InN molar fraction up to 20% on 3C-SiC (0 0 1) substrates by radio frequency N2 plasma molecular beam epitaxy. Cubic InGaN epilayers of 200 nm thickness on cubic GaN were found to be strained by high resolution X-ray diffraction (XRD) reciprocal space measurement. On the other hand, 450 nm thick cubic InGaN epilayers on cubic GaN were fully relaxed. The photoluminescence (PL) emission from the cubic InGaN epilayers was clearly observed at room temperature. The energy of the PL emission was decreased nonlinearly with the increase of InN molar fraction, and that of a In0.20Ga0.80N epilayer was as low as 2.1 eV. We also attempted to fabricate cubic InGaN/GaN multiple quantum well structures. Several satellite peaks of the superstructure were observed by XRD, which indicates the excellent quality of superstructure and hetero-interface.
KW - A1. X-ray diffraction
KW - A3. Molecular beam epitaxy
KW - A3. Quantum wells
KW - B1. Nitrides
KW - B2. Semiconducting III-V materials
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U2 - 10.1016/S0022-0248(01)00745-X
DO - 10.1016/S0022-0248(01)00745-X
M3 - Conference article
AN - SCOPUS:0035398123
VL - 227-228
SP - 471
EP - 475
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
T2 - 11th International Conference on Molecular Beam Epitaxy
Y2 - 11 September 2000 through 15 September 2000
ER -