Growth and characterization of cubic InGaN epilayers on 3C-SiC by RF MBE

T. Kitamura, S. H. Cho, Y. Ishida, T. Ide, X. Q. Shen, H. Nakanishi, S. Chichibu, H. Okumura

研究成果: Conference article査読

22 被引用数 (Scopus)

抄録

We successfully grew cubic InGaN epilayers having the InN molar fraction up to 20% on 3C-SiC (0 0 1) substrates by radio frequency N2 plasma molecular beam epitaxy. Cubic InGaN epilayers of 200 nm thickness on cubic GaN were found to be strained by high resolution X-ray diffraction (XRD) reciprocal space measurement. On the other hand, 450 nm thick cubic InGaN epilayers on cubic GaN were fully relaxed. The photoluminescence (PL) emission from the cubic InGaN epilayers was clearly observed at room temperature. The energy of the PL emission was decreased nonlinearly with the increase of InN molar fraction, and that of a In0.20Ga0.80N epilayer was as low as 2.1 eV. We also attempted to fabricate cubic InGaN/GaN multiple quantum well structures. Several satellite peaks of the superstructure were observed by XRD, which indicates the excellent quality of superstructure and hetero-interface.

本文言語English
ページ(範囲)471-475
ページ数5
ジャーナルJournal of Crystal Growth
227-228
DOI
出版ステータスPublished - 2001 7月 1
外部発表はい
イベント11th International Conference on Molecular Beam Epitaxy - Bijing, China
継続期間: 2000 9月 112000 9月 15

ASJC Scopus subject areas

  • 凝縮系物理学
  • 無機化学
  • 材料化学

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