Growth and characterization of cubic GaN

H. Okumura, K. Ohta, G. Feuillet, K. Balakrishnan, S. Chichibu, H. Hamaguchi, P. Hacke, S. Yoshida

研究成果: Article査読

180 被引用数 (Scopus)

抄録

We have grown high-quality cubic GaN epilayers on GaAs and 3C-SiC substrates by molecular beam epitaxy technique using dimethylhydrazine or ammonia/nitrogen plasma as a nitrogen source. An X-ray diffraction peak width of 16 min and a low-temperature photoluminescence peak width of 19 meV were achieved. Various surface reconstruction transitions have been observed for cubic GaN(001) surfaces, recently. These results, along with previously published studies on cubic nitrides, are summarized, and the current status of the growth and characterization of cubic nitrides including AlN and InN is discussed.

本文言語English
ページ(範囲)113-133
ページ数21
ジャーナルJournal of Crystal Growth
178
1-2
DOI
出版ステータスPublished - 1997 6月
外部発表はい

ASJC Scopus subject areas

  • 凝縮系物理学
  • 無機化学
  • 材料化学

フィンガープリント

「Growth and characterization of cubic GaN」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル