Greenish-white electroluminescence from p-type CuGaS2 heterojunction diodes using n-type ZnO as an electron injector

S. F. Chichibu, T. Ohmori, N. Shibata, T. Koyama, T. Onuma

研究成果: Article査読

36 被引用数 (Scopus)

抄録

Greenish-white electroluminescence (EL) was observed from p-type (001) CuGaS2 chalcopyrite semiconductor epilayers grown on a (001) GaP substrate by metalorganic vapor phase epitaxy, due to the electron injection from preferentially (0001)-oriented polycrystalline n-type ZnO thin films deposited by the surface-damage-free helicon-wave-excited-plasma sputtering method. The structure was designed to enable the electron injection from n-type wide band gap partner for p-CuGaS2 forming the ZnO/CuGaS2 TYPE-I heterojunction. The EL spectra exhibited emission peaks and bands between 1.6 and 2.5 eV, although the higher energy portion was absorbed by the GaP substrate. Since the spectral line shape resembled that of the photoluminescence from the identical CuGaS2 epilayers, the EL was assigned to originate from pCuGaS2.

本文言語English
ページ(範囲)4403-4405
ページ数3
ジャーナルApplied Physics Letters
85
19
DOI
出版ステータスPublished - 2004 11 8
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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