Grating-coupled light emission from the slow mode of metal-insulator-metal tunnel junctions

Sukekatsu Ushioda; Yoichi Uehara; Masatoshi Takada; Koji Otsubo; Junichi Murota

doi:10.1143/JJAP.31.L870

Grating-coupled light emission from the slow mode of metal-insulator-metal tunnel junctions

Sukekatsu Ushioda, Yoichi Uehara, Masatoshi Takada, Koji Otsubo, Junichi Murota

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研究成果: Article › 査読

16 被引用数 (Scopus)

抄録

We have observed the direct light emission from the slow mode of surface plasmon polaritons (SPP) of metal-insulator-metal (MIM) tunnel junctions formed on a ultra-fine grating. The grating (period=100 nm, groove depth=12 nm, area=200 µm×200 µm) was created on a Si(100) wafer, using a direct electron beam lithography technique and wet etching of SiO₂ The MIM junction was formed by evaporation of Al and Au films on this grating. The emission peak for the Al-Oxide-Au junction was observed at 1.55 eV that is expected from the dispersion curve of the slow mode. The spectral width is appreciably narrower than the emission due to the natural residual micro-roughness of the junction.

本文言語	English
ページ（範囲）	L870-L873
ジャーナル	Japanese journal of applied physics
巻	31
号	7
DOI	https://doi.org/10.1143/JJAP.31.L870
出版ステータス	Published - 1992 7

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

文献へのアクセス

10.1143/JJAP.31.L870

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引用スタイル

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title = "Grating-coupled light emission from the slow mode of metal-insulator-metal tunnel junctions",

abstract = "We have observed the direct light emission from the slow mode of surface plasmon polaritons (SPP) of metal-insulator-metal (MIM) tunnel junctions formed on a ultra-fine grating. The grating (period=100 nm, groove depth=12 nm, area=200 µm×200 µm) was created on a Si(100) wafer, using a direct electron beam lithography technique and wet etching of SiO2 The MIM junction was formed by evaporation of Al and Au films on this grating. The emission peak for the Al-Oxide-Au junction was observed at 1.55 eV that is expected from the dispersion curve of the slow mode. The spectral width is appreciably narrower than the emission due to the natural residual micro-roughness of the junction.",

keywords = "Electron beam lithography, Light emitting tunnel junction, Si, Surface plasmon, Ultra-fine grating",

author = "Sukekatsu Ushioda and Yoichi Uehara and Masatoshi Takada and Koji Otsubo and Junichi Murota",

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AU - Ushioda, Sukekatsu

AU - Uehara, Yoichi

AU - Takada, Masatoshi

AU - Otsubo, Koji

AU - Murota, Junichi

PY - 1992/7

Y1 - 1992/7

N2 - We have observed the direct light emission from the slow mode of surface plasmon polaritons (SPP) of metal-insulator-metal (MIM) tunnel junctions formed on a ultra-fine grating. The grating (period=100 nm, groove depth=12 nm, area=200 µm×200 µm) was created on a Si(100) wafer, using a direct electron beam lithography technique and wet etching of SiO2 The MIM junction was formed by evaporation of Al and Au films on this grating. The emission peak for the Al-Oxide-Au junction was observed at 1.55 eV that is expected from the dispersion curve of the slow mode. The spectral width is appreciably narrower than the emission due to the natural residual micro-roughness of the junction.

AB - We have observed the direct light emission from the slow mode of surface plasmon polaritons (SPP) of metal-insulator-metal (MIM) tunnel junctions formed on a ultra-fine grating. The grating (period=100 nm, groove depth=12 nm, area=200 µm×200 µm) was created on a Si(100) wafer, using a direct electron beam lithography technique and wet etching of SiO2 The MIM junction was formed by evaporation of Al and Au films on this grating. The emission peak for the Al-Oxide-Au junction was observed at 1.55 eV that is expected from the dispersion curve of the slow mode. The spectral width is appreciably narrower than the emission due to the natural residual micro-roughness of the junction.

KW - Electron beam lithography

KW - Light emitting tunnel junction

KW - Si

KW - Surface plasmon

KW - Ultra-fine grating

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