7 被引用数 (Scopus)

抄録

Graphene-on-silicon field-effect transistors (GOSFETs) are studied as a candidate of next generation transistors. Graphene is formed on SiC layers grown on Si substrates. As well as the channel material, the gate stack is also a key component of FETs. In this study, SiCN deposited by plasma-enhanced chemical vapor deposition (PECVD) using hexamethyldisilazane (HMDS) vapor is studied. During PECVD, hydrogen is used as a carrier gas in addition to HMDS vapor. This becomes an advantage in the graphene process because hydrogen has cleaning effect on graphene surface. To verify this effect, SiCN gate stack is applied to the graphene on SiC substrates. FETs with SiCN gate stack exhibit clearer ambipolar characteristics and larger drain current density than FETs with conventional SiN gate stack. The SiCN gate stack is also applied to GOSFETs. Resulting devices also exhibit ambipolar characteristics and larger current density than previously reported GOSFETs with SiN gate stack.

本文言語English
ホスト出版物のタイトルState-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53
ページ249-254
ページ数6
6
DOI
出版ステータスPublished - 2011 12 1
イベントState-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53 - 220th ECS Meeting - Boston, MA, United States
継続期間: 2011 10 92011 10 14

出版物シリーズ

名前ECS Transactions
番号6
41
ISSN(印刷版)1938-5862
ISSN(電子版)1938-6737

Other

OtherState-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53 - 220th ECS Meeting
CountryUnited States
CityBoston, MA
Period11/10/911/10/14

ASJC Scopus subject areas

  • Engineering(all)

フィンガープリント 「Graphene/SiC/Si FETs with SiCN gate stack」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

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