Graphene-based van der Waals heterostructures towards a new type of terahertz quantum-cascade lasers

Takayuki Watanabe, Deepika Yadav, Stephane Boubanga Tombet, Akira Satou, Alexander A. Dubinov, Victor Ryzhii, Taiichi Otsuji

研究成果: Conference contribution

抄録

Current-injection pumping in graphene makes carrier population inversion enabling lasing and/or amplification of terahertz (THz) radiation. We have recently demonstrated single-mode THz lasing at 100K in graphene-channel transistor laser structures. Introduction of a gated double-graphene-layered (G-DGL) van der Waals heterostructure is a promising route to further increase the operation temperature and radiation intensity via plasmon- and/or photon-assisted quantummechanical tunneling. We have proposed a cascading of the G-DGL unit element working as a new type of THz quantumcascade lasers. Numerical analyses demonstrate further increase of the quantum efficiency of THz lasing by orders of magnitude compared to a transistor or single G-DGL structure.

本文言語English
ホスト出版物のタイトルTerahertz Emitters, Receivers, and Applications X
編集者Manijeh Razeghi, Alexei N. Baranov, Miriam S. Vitiello
出版社SPIE
ISBN(電子版)9781510629417
DOI
出版ステータスPublished - 2019
イベントTerahertz Emitters, Receivers, and Applications X 2019 - San Diego, United States
継続期間: 2019 8 112019 8 13

出版物シリーズ

名前Proceedings of SPIE - The International Society for Optical Engineering
11124
ISSN(印刷版)0277-786X
ISSN(電子版)1996-756X

Conference

ConferenceTerahertz Emitters, Receivers, and Applications X 2019
国/地域United States
CitySan Diego
Period19/8/1119/8/13

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • コンピュータ サイエンスの応用
  • 応用数学
  • 電子工学および電気工学

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