Grain growth of polycrystalline Si thin film for solar cells and its effect on crystal properties

Toru Ujihara, Eiji Kanda, Kozo Fujiwara, Gen Sazaki, Noritaka Usami, Yoshihiro Murakami, Kuninori Kitahara, Kazuo Nakajima

研究成果: Conference article査読

抄録

In this study, in order to inquire into the principle of the fabrication of the poly-Si film via the grain growth process, we clarified the grain growth mechanism of the thin film for the solar cell by investigating temporal change of the grain size distribution. Moreover, this process was explained by a theoretical model taking two- and three- dimensional growth modes into account. In addition, the crystal quality was evaluated using Raman spectroscopy. The quality was very high comparing with the film prepared by the laser annealing technique.

本文言語English
ページ(範囲)1339-1342
ページ数4
ジャーナルConference Record of the IEEE Photovoltaic Specialists Conference
出版ステータスPublished - 2002
イベント29th IEEE Photovoltaic Specialists Conference - New Orleans, LA, United States
継続期間: 2002 5 192002 5 24

ASJC Scopus subject areas

  • 制御およびシステム工学
  • 産業および生産工学
  • 電子工学および電気工学

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