Grain growth mechanism of Cu thin films

Masanori Murakami, Miki Moriyama, Susumu Tsukimoto, Kazuhiro Ito

研究成果: Article査読

13 被引用数 (Scopus)

抄録

Since Cu was found to be attractive as interconnect materials for ultra-large scale integrated (ULSI) Si devices, the electrical properties of Cu films have been extensively studied to prepare low resistance films. It was found in our previous papers that reduction of the electrical resistance of the Cu films was achieved by increasing grain sizes of the Cu films and large-grained Cu films were essential for the low resistance Cu interconnects. The primary factor to increase the grain sizes was also found to be intrinsic and/or extrinsic strain (or stress) introduced into the films. The present paper addresses the driving force of the grain growth of the Cu thin films based on the strain energy criterion model.

本文言語English
ページ(範囲)1737-1740
ページ数4
ジャーナルMaterials Transactions
46
7
DOI
出版ステータスPublished - 2005 7月
外部発表はい

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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