Grain boundary structure and chemical bonding state of superplastic SiO2-doped TZP

Yuichi Ikuhara, Isao Tanaka, Parjaree Thavorniti, Taketo Sakuma

    研究成果: Article査読

    10 被引用数 (Scopus)

    抄録

    Superplastic SiO2-doped TZP (tetragonal zirconia polycrystal) was fabricated by sintering at 1300°C in air. The grain boundaries were investigated by high-resolution electron microscopy (HREM), energy dispersive X-ray spectroscopy (EDS) and electron energy loss spectroscopy (EELS). It was found that no amorphous phase was present between two adjacent grains, but an amorphous pocket was formed at multiple junctions of grain boundaries. An experimental HREM image of Σ17a grain boundary was compared with the computer-simulated image to identify the periodic channel structure along the boundary. EDS analysis revealed that yttrium and silicon were cosegregated in the vicinity of grain boundaries. The bonding state at a grain boundary was measured by EELS to reveal that O-Kedge spectrum was shifted by ~4 eV toward high energy loss side. Electron energy loss near edge structure (ELNES) of O-Kedge was investigated by a first principles molecular-orbital (MO) calculation using the discrete-variational (DV)-Xα method both for ZrO2,Y2O3 and SiO2 model clusters. Comparison between the experimental and theoretical spectra by the present MO calculation found that the bonding state at the grain boundaries was similar to that in SiO2, although no silicious glassy film was present.

    本文言語English
    ページ(範囲)467-472
    ページ数6
    ジャーナルJournal of Electron Microscopy
    46
    6
    DOI
    出版ステータスPublished - 1997 1 1

    ASJC Scopus subject areas

    • Instrumentation

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