Grain boundary analysis in superplastic sio2 - doped TZP

P. Thavorniti, Y. Ikuhara, T. Sakuma

研究成果: Article

6 引用 (Scopus)

抜粋

Detailed grain boundary analysis in superplastic SiO2-doped tetragonal zirconia polycrystal (TZP) is performed using high-resolution electron microscopy (HREM) and energy-dispersive X-ray spectroscopy (EDS). As a reference, high - purity TZP is also investigated. In SiO2 - doped TZP, an amorphous SiO2 phase is present only in grain junctions and not in the grain boundary faces. But it is found that Si4+ ions are distributed along gram boundaries with thickness of several nanometers. Y3+ ions are segregated in grain boundaries in SiO2 - doped TZP as well as high - purity TZP. The ductility enhancement in SiO2 - doped TZP must be understood from the detailed knowledge on grain boundary structure and chemistry.

元の言語English
ページ(範囲)367-372
ページ数6
ジャーナルMaterials Science Forum
233-234
出版物ステータスPublished - 1997 1 1
外部発表Yes

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

フィンガープリント Grain boundary analysis in superplastic sio<sub>2</sub> - doped TZP' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。

  • これを引用

    Thavorniti, P., Ikuhara, Y., & Sakuma, T. (1997). Grain boundary analysis in superplastic sio2 - doped TZP. Materials Science Forum, 233-234, 367-372.