Detailed grain boundary analysis in superplastic SiO2-doped tetragonal zirconia polycrystal (TZP) is performed using high-resolution electron microscopy (HREM) and energy-dispersive X-ray spectroscopy (EDS). As a reference, high - purity TZP is also investigated. In SiO2 - doped TZP, an amorphous SiO2 phase is present only in grain junctions and not in the grain boundary faces. But it is found that Si4+ ions are distributed along gram boundaries with thickness of several nanometers. Y3+ ions are segregated in grain boundaries in SiO2 - doped TZP as well as high - purity TZP. The ductility enhancement in SiO2 - doped TZP must be understood from the detailed knowledge on grain boundary structure and chemistry.
|ジャーナル||Materials Science Forum|
|出版物ステータス||Published - 1997 1 1|
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering