Giant tunneling magnetoresistance in MgO-based magnetic tunnel junctions and its industrial applications

Shinji Yuasa, Rie Matsumoto, Akio Fukushima, Hitoshi Kubota, Taro Nagahama, David D. Djayaprawira, Koji Tsunekawa, Hiroki Maehara, Yoshinori Nagamine, Motonobu Nagai, Shinji Yamagata, Yoshishige Suzuki, Masaki Mizuguchi, Alina M. Deac, Koji Ando

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

First-principle theories predicted an extremely high magnetoresistance (MR) ratio over 1000% in epitaxial Fe(001)/MgO(001)/Fe(001) MTJs. We have fabricated fully epitaxial Fe-Co(001)/MgO(001)/Fe-Co(001) MTJs and textured CoFeB/MgO(001)/CoFeB MTJs and achieved giant MR ratios above 400% at room temperature. An ultra-low resistance-area (RA) product indispensable for magnetic sensor application has also been achieved in CoFeB/MgO(001)/CoFeB MTJs. The giant TMR effect in MgO-based MTJs is the key for next-generation spintronic devices.

本文言語English
ホスト出版物のタイトル2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
ページ186-187
ページ数2
DOI
出版ステータスPublished - 2006
外部発表はい
イベント2006 IEEE Nanotechnology Materials and Devices Conference, NMDC - Gyeongju, Korea, Republic of
継続期間: 2006 10月 222006 10月 25

出版物シリーズ

名前2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
1

Other

Other2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
国/地域Korea, Republic of
CityGyeongju
Period06/10/2206/10/25

ASJC Scopus subject areas

  • 電子工学および電気工学
  • 材料科学(全般)

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