Giant tunneling magnetoresistance in Co2MnSi/Al-O /Co 2MnSi magnetic tunnel junctions

Y. Sakuraba, M. Hattori, M. Oogane, Y. Ando, H. Kato, A. Sakuma, T. Miyazaki, H. Kubota

研究成果: Article査読

475 被引用数 (Scopus)

抄録

Magnetic tunnel junctions (MTJs) with a stacking structure of Co2 MnSiAl-O Co2 MnSi were fabricated using magnetron sputtering system. Fabricated MTJ exhibited an extremely large tunneling magnetoresistance (TMR) ratio of 570% at low temperature, which is the highest TMR ratio reported to date for an amorphous Al-O tunneling barrier. The observed dependence of tunneling conductance on bias voltage clearly reveals the half-metallic energy gap of Co2 MnSi. The origins of large temperature dependence of TMR ratio were discussed on the basis of the present results.

本文言語English
論文番号192508
ジャーナルApplied Physics Letters
88
19
DOI
出版ステータスPublished - 2006

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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