Giant plasmon instability in a dual-grating-gate graphene field-effect transistor

Y. Koseki, V. Ryzhii, T. Otsuji, V. V. Popov, A. Satou

研究成果: Article査読

39 被引用数 (Scopus)

抄録

We study the instability of plasmons in a dual-grating-gate graphene field-effect transistor induced by dc current injection using self-consistent simulations with the Boltzmann equation. With only acoustic-phonon-limited electron scattering, it is demonstrated that a total growth rate of the plasmon instability, with a terahertz/midinfrared range of the frequency, can exceed 4×1012s-1 at room temperature, which is an order of magnitude larger than in two-dimensional electron gases based on the usual semiconductors. By comparing the simulation results with existing theory, it is revealed that the giant total growth rate originates from a simultaneous occurrence of the so-called Dyakonov-Shur and Ryzhii-Satou-Shur instabilities.

本文言語English
論文番号245408
ジャーナルPhysical Review B
93
24
DOI
出版ステータスPublished - 2016 6月 10

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

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