Giant Negative Magnetoresistance of (Ga,Mn)As/GaAs in the Vicinity of a Metal-Insulator Transition

A. Oiwa, S. Katsumoto, A. Endo, M. Hirasawa, Y. Iye, H. Ohno, F. Matsukura, A. Shen, Y. Sugawara

研究成果: Article

13 引用 (Scopus)

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We have studied the transport and magnetic properties of Ga1-xMnxAs/GaAs with different Mn content (0.015 < x < 0.071). In these magnetic semiconductors, the exchange interaction between the carriers and the localized magnetic moments leads to unique transport properties. In this paper, we discuss an insulator-metal-insulator transition and a giant negative magnetoresistance observed in the vicinity of the metal-insulator transitions.

元の言語English
ページ(範囲)167-171
ページ数5
ジャーナルPhysica Status Solidi (B) Basic Research
205
発行部数1
DOI
出版物ステータスPublished - 1998 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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