Germanium-doped Czochralski silicon: A novel material for solar cells

Mukannan Arivanandhan, Gotoh Raira, Kozo Fujiwara, Satoshi Uda, Yasuhiro Hayakawa, Makoto Konagai

研究成果: Article査読

6 被引用数 (Scopus)

抄録

The effect of Ge codoping on the light induced degradation (LID) of B doped Czochralski-silicon (CZ-Si) was investigated. The rate of degradation under illumination is relatively suppressed in B and Ge codoped Czochralski-silicon (CZ-Si) compared to B-doped CZ-Si. The Oi concentrations measured by FTIR spectroscopy was decreased as the Ge concentration increased in the Si crystal. The formation of Ge-VO complex in silicon lattice is considered as a possible reason for the variation in Oi. Moreover, the compressive strain field around the Ge-VO complex may increase the barrier for O diffusion which limits the formation of fast diffusing O dimmers. As a consequence, the B-O dimmer (O2i) related defects were relatively suppressed, which causes the suppression of LID effect in B and Ge codoped CZ-Si.

本文言語English
ページ(範囲)1746-1749
ページ数4
ジャーナルPhysica Status Solidi (C) Current Topics in Solid State Physics
10
12
DOI
出版ステータスPublished - 2013 12

ASJC Scopus subject areas

  • 凝縮系物理学

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