Generation of dislocation clusters at triple junctions of random angle grain boundaries during cast growth of silicon ingots

Yutaka Ohno, Kazuya Tajima, Kentaro Kutsukake, Noritaka Usami

研究成果: Article査読

7 被引用数 (Scopus)

抄録

Three-dimensional distribution of grain boundaries (GBs) and generation sources of dislocation clusters is examined in a cast-grown high-performance multicrystalline silicon ingot for commercial solar cells. A significant number of dislocations are generated nearby some triple junctions of random angle GBs, although it is believed that such non-coherent GBs would not induce large strain during the cast growth. This explosive generation of dislocations would take place when the triple junctions are interacted with multiple Σ3{111} GBs. A segment of the random angle GB connected with a pair of Σ3{111} GBs nearby the triple junction would act as a dislocation source.

本文言語English
論文番号105505
ジャーナルApplied Physics Express
13
10
DOI
出版ステータスPublished - 2020 10月 6

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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