Generalized mechanism of the resistance switching in binary-oxide-based resistive random-access memories

Katsumasa Kamiya, Moon Young Yang, Takahiro Nagata, Seong Geon Park, Blanka Magyari-Köpe, Toyohiro Chikyow, Keisaku Yamada, Masaaki Niwa, Yoshio Nishi, Kenji Shiraishi

研究成果: Article査読

42 被引用数 (Scopus)

抄録

We report that VO cohesion-isolation transition caused by carrier injection/removal is a generalized resistance switching mechanism of binary-oxide-based resistive random-access memories (ReRAMs). We propose universal guiding principles by which ReRAM with unipolar and bipolar operations can be designed by controlling electrode work functions. We found by first-principles calculations that structural phase transition with V O cohesion-isolation is the physical origin of the resistance switching mechanism of binary-oxide-based ReRAM. Based on our theory, we can propose a guiding principle toward bipolar switching ReRAM with stable high work function metal electrodes.

本文言語English
論文番号155201
ジャーナルPhysical Review B - Condensed Matter and Materials Physics
87
15
DOI
出版ステータスPublished - 2013 4 8
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

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