GeH 4 adsorption on Si(0 0 1) at RT: Transfer of H atoms to Si sites and atomic exchange between Si and Ge

Takeshi Murata, Maki Suemitsu

研究成果: Article査読

10 被引用数 (Scopus)

抄録

Si(0 0 1) surfaces exposed to various doses of germane (GeH 4 ) at room temperature (RT) have been investigated by using temperature-programmed desorption (TPD) and multiple internal reflection Fourier transform infrared spectroscopy (MIR-FTIR). It is found that all H atoms from GeH 4 molecules are transferred to surface Si atoms on adsorption, and form mainly doubly occupied Si dimers. Ge hydrides and Si higher hydrides rarely exist. These features persist beyond 1 monolayer of the hydrogen coverage. These findings strongly suggest atomic exchange between Ge adatoms and surface Si atoms even at RT. Through analysis of H uptake curve, the number of necessary surface dangling bonds for a GeH 4 molecule adsorption is obtained to be unity at low coverage.

本文言語English
ページ(範囲)179-182
ページ数4
ジャーナルApplied Surface Science
224
1-4
DOI
出版ステータスPublished - 2004 3 15

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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