Ge dot formation on Si by MOVPE using tetramethylgermanium (Ge(CH 3)4)

M. Ohtake, M. Wada, M. Sugiyama, H. Isshiki, R. Saito, S. Yugo, T. Kimura

研究成果: Conference article査読

抄録

Ge dot formation on Si(100) in metal organic vapor phase epitaxy (MOVPE) using tetramethylgermanium (TMGe) as the Ge source is demonstrated. The dots were formed in the growth temperature range between 600 and 700 °C. Atomic force microscopy measurement indicates that Ge dots grow in the Stranski-Krastanov mode. By comparison of the aspect ratio of the dots to those obtained by other growth methods, it is shown that the Ge dot formation mechanism and the resulting dot shape depend on the atmosphere during the dot formation.

本文言語English
ページ(範囲)1113-1116
ページ数4
ジャーナルPhysica Status Solidi C: Conferences
4
DOI
出版ステータスPublished - 2003 12 1
外部発表はい
イベント2nd International Conference on Semiconductor Quantum Dots, QD 2002 - Tokyo, Japan
継続期間: 2002 9 302002 10 3

ASJC Scopus subject areas

  • Condensed Matter Physics

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