Gate-voltage modulation in graphene

K. Tsukagoshi, H. Miyazaki, S. L. Li, A. Kumatani, H. Hiura, A. Kanda

研究成果: Chapter

1 引用 (Scopus)

抜粋

We present a review of our experiments on graphene transistors in its potential use as atomic film switching devices. As the preparation of the bilayer graphene, a quick formation method to precisely confirm the number of layers is required. Fabrication of gate electrodes specialized for the graphene system is also useful in the application of a high electric field in the graphene transistor. In this short review paper, our original method of fabrication and structure of gate electrodes for the graphene transistor will be introduced.

元の言語English
ホスト出版物のタイトルGraphene and its Fascinating Attributes
出版者World Scientific Publishing Co.
ページ179-187
ページ数9
ISBN(電子版)9789814329361
ISBN(印刷物)9814329355, 9789814329354
DOI
出版物ステータスPublished - 2011 1 1
外部発表Yes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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  • これを引用

    Tsukagoshi, K., Miyazaki, H., Li, S. L., Kumatani, A., Hiura, H., & Kanda, A. (2011). Gate-voltage modulation in graphene. : Graphene and its Fascinating Attributes (pp. 179-187). World Scientific Publishing Co.. https://doi.org/10.1142/9789814329361_0011