Gate-tunable control in graphene semiconductive channel

K. Tsukagoshi, H. Miyazaki, S. L. Li, A. Kanda, S. Nakaharai

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

We have realized a practical wide band gap in bilayer graphene. The gap was induced by an electric field applied by dual-gate sandwiching the bilayer graphene. A self-assembled gate insulator enabled us to apply a large electric field which enhanced the band gap. The wide band gap allowed for operation of a logic gate composed of bilayer graphene transistors. These results predict that graphene electronics will possibly be realized as emerging transistors with an atomically thin semiconductor.

本文言語English
ホスト出版物のタイトルProceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012
ページ305-308
ページ数4
出版ステータスPublished - 2012 10 31
外部発表はい
イベント19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012 - Kyoto, Japan
継続期間: 2012 7 42012 7 6

出版物シリーズ

名前Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012

Other

Other19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012
国/地域Japan
CityKyoto
Period12/7/412/7/6

ASJC Scopus subject areas

  • 制御およびシステム工学
  • 電子工学および電気工学

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