Gate-controlled lateral diodes formed in undoped heterostructure

研究成果: Article査読

4 被引用数 (Scopus)

抄録

We developed a gate-controlled diode that has a Schottky gate on an undoped heterostructure with n- and p-type ohmic regions at opposite ends of the gate. Either two-dimensional electron or hole gas (2DEG or 2DHG) can be formed at the same heterointerface by an electric field from the surface gate. When this diode is biased in the forward direction, current flow is observed in the two gate voltage ranges corresponding to the formation of 2DEG and 2DHG in the undoped heterostructure. When the drain voltage between the p- and n-type contacts exceeds a certain value, a double injection forms a novel current channel that differs from the conventional 2DEG or 2DHG.

本文言語English
ページ(範囲)L1245-L1248
ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
35
10 PART A
DOI
出版ステータスPublished - 1996 10 1
外部発表はい

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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