Gate control of spin-orbit interaction in an InAs-inserted In0.53Ga0.47As/In0.52Al0.48As heterostructure

Junsaku Nitta, Tatsushi Akazaki, Hideaki Takayanagi, Takatomo Enoki

研究成果: Article査読

25 被引用数 (Scopus)

抄録

We have confirmed by analyzing beating patterns of Shubnikov-de Haas oscillations that a spin-orbit interaction of the conduction band in an InAs-inserted In0.53Ga0.47As/In0.52Al0.48As heterostructure can be controlled by applying the gate voltage. The change in the spin-orbit interaction can be attributed to the Rashba term. Comparison with an In0.53Ga0.47As/In0.52Al0.48As heterostructure reveals that the spin-orbit interaction in the InAs-inserted system is more sensitive to the carrier concentration.

本文言語English
ページ(範囲)527-531
ページ数5
ジャーナルPhysica E: Low-Dimensional Systems and Nanostructures
2
1-4
DOI
出版ステータスPublished - 1998 7 15
外部発表はい

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

フィンガープリント 「Gate control of spin-orbit interaction in an InAs-inserted In<sub>0.53</sub>Ga<sub>0.47</sub>As/In<sub>0.52</sub>Al<sub>0.48</sub>As heterostructure」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

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