We have confirmed by analyzing beating patterns of Shubnikov-de Haas oscillations that a spin-orbit interaction of the conduction band in an InAs-inserted In0.53Ga0.47As/In0.52Al0.48As heterostructure can be controlled by applying the gate voltage. The change in the spin-orbit interaction can be attributed to the Rashba term. Comparison with an In0.53Ga0.47As/In0.52Al0.48As heterostructure reveals that the spin-orbit interaction in the InAs-inserted system is more sensitive to the carrier concentration.
|ジャーナル||Physica E: Low-Dimensional Systems and Nanostructures|
|出版ステータス||Published - 1998 7 15|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics