Gas-source MBE of SiC/Si using monomethylsilane

Hideki Nakazawa, Maki Suemitsu, Seiji Asami

研究成果: Conference article査読

26 被引用数 (Scopus)

抄録

We have conducted a systematic series of gas-source MBE experiments of 3C-SiC on Si(100) using monomethylsilane (MMS), and have investigated the relation between growth parameters (MMS pressure and growth temperature) and the grown film quality using atomic force microscopy, X-ray diffraction, Fourier transform infrared spectroscopy, and Auger electron spectroscopy. As a result, it was clarified that there exists a set of optimum growth parameters for the best surface morphology and crystallinity. The optimum temperature lowered with decreasing MMS pressure, and the crystallinity of the SiC film improved at the same time. In particular, a high quality 3C-SiC film on Si(100) was successfully grown at T = 900 °C.

本文言語English
ページ(範囲)269-272
ページ数4
ジャーナルThin Solid Films
369
1
DOI
出版ステータスPublished - 2000 7月 3
外部発表はい
イベントThe International Joint Conference on Silicon Epitaxyand Heterostructures (IJC-SI) - Miyagi, Jpn
継続期間: 1999 9月 121999 9月 17

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 表面および界面
  • 表面、皮膜および薄膜
  • 金属および合金
  • 材料化学

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