GaN nanostructure fabrication by focused-ion-beam-assisted chemical vapor deposition

T. Nagata, P. Ahmet, Y. Sakuma, T. Sekiguchi, T. Chikyow

研究成果: Article査読

12 被引用数 (Scopus)

抄録

Gallium nitride (GaN) nanostructures were fabricated by focused-ion-beam-assisted chemical vapor deposition. Gallium precursor gas and atomic nitrogen radicals were irradiated onto the surface simultaneously during the irradiation of a Ga ion beam of 25 keV at 600 °C. Scanning electron microscopy observations revealed three-dimensional structures formed periodically on the substrates. Although near-band-edge emission from GaN was observed using this method, other luminescence attributed to defects and/or impurities was also observed. Surface damage caused by the ion beam was also observed. To improve the structural shape and optical properties, a two-step growth method is proposed. First, structure formation was performed at 300 °C. Second, nitridation was performed at 600 °C to make the GaN nanostructures stoichiometric and to activate the nitrogen in the structures. GaN nanostructures of a 200 nm×100 nm block of height 50 nm were fabricated and strong near-band-edge emission at 3.37 eV from GaN was observed.

本文言語English
論文番号013103
ジャーナルApplied Physics Letters
87
1
DOI
出版ステータスPublished - 2005 7 4
外部発表はい

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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