GaN-LED grown on SI substrate by MBE/MOCVD and monolithic fabrication of a light distribution variable device

M. Wakui, R. Ito, H. Sameshima, F. R. Hu, K. Hane

研究成果: Conference contribution

3 被引用数 (Scopus)

抄録

Monolithic integration of GaN-based semiconductor with Si MEMS is demonstrated from a GaN/Si wafer, in which GaN crystal is grown by molecular beam epitaxy (MBE). A Light emitting diode is fabricated on the grown GaN crystal and the blue electro-luminescence is obtained. The GaN crystal property of is improved by using a template grown by metal organic chemical vapor deposition (MOCVD). A light distribution variable device with Si comb actuator is monolithically fabricated.

本文言語English
ホスト出版物のタイトルTRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems
ページ1349-1352
ページ数4
DOI
出版ステータスPublished - 2009
イベントTRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems - Denver, CO, United States
継続期間: 2009 6月 212009 6月 25

出版物シリーズ

名前TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems

Other

OtherTRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems
国/地域United States
CityDenver, CO
Period09/6/2109/6/25

ASJC Scopus subject areas

  • ハードウェアとアーキテクチャ
  • 電子工学および電気工学

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