@inproceedings{b581c9b40b26492992b3b2752b66c2a4,
title = "GaN-LED grown on SI substrate by MBE/MOCVD and monolithic fabrication of a light distribution variable device",
abstract = "Monolithic integration of GaN-based semiconductor with Si MEMS is demonstrated from a GaN/Si wafer, in which GaN crystal is grown by molecular beam epitaxy (MBE). A Light emitting diode is fabricated on the grown GaN crystal and the blue electro-luminescence is obtained. The GaN crystal property of is improved by using a template grown by metal organic chemical vapor deposition (MOCVD). A light distribution variable device with Si comb actuator is monolithically fabricated.",
keywords = "Comb actuator, GaN, GaN-Si hybrid MEMS",
author = "M. Wakui and R. Ito and H. Sameshima and Hu, {F. R.} and K. Hane",
year = "2009",
doi = "10.1109/SENSOR.2009.5285851",
language = "English",
isbn = "9781424441938",
series = "TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems",
pages = "1349--1352",
booktitle = "TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems",
note = "TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems ; Conference date: 21-06-2009 Through 25-06-2009",
}