Gan comb-drive actuators on Si substrate

T. Tanae, H. Samashima, K. Hane

研究成果: Conference contribution

抄録

Micro-electro-mechanical comb-drive actuators made of GaN crystal are studied for an integrated a tunable GaN optical device. The GaN crystal was grown on a Si substrate by metal-organic chemical vapor deposition (MOCVD) with a low-temperature buffer layer. Selectively etching the Si substrate by XeF 2 gas, the GaN thin crystal layers are self-supported in air. Due to the residual stress by the crystal growth, the freestanding GaN layer of actuator suffers from the considerable deformation depending on the growth conditions. To compensate the convex deformation, the crystallization tension of thin HfO2 film deposited on the GaN layer is used. The displacement is 1.3 m at 70V. The fabricated GaN actuator can be useful for the monolithic integration for tunable GaN light sources.

本文言語English
ホスト出版物のタイトル2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11
ページ486-489
ページ数4
DOI
出版ステータスPublished - 2011 9月 1
イベント2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11 - Beijing, China
継続期間: 2011 6月 52011 6月 9

出版物シリーズ

名前2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11

Other

Other2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11
国/地域China
CityBeijing
Period11/6/511/6/9

ASJC Scopus subject areas

  • ハードウェアとアーキテクチャ
  • 電子工学および電気工学

フィンガープリント

「Gan comb-drive actuators on Si substrate」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル