(Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs

H. Ohno, A. Shen, F. Matsukura, A. Oiwa, A. Endo, S. Katsumoto, Y. Iye

研究成果: Article査読

2187 被引用数 (Scopus)

抄録

A new GaAs-based diluted magnetic semiconductor, (Ga,Mn)As, was prepared by molecular beam epitaxy. The lattice constant of (Ga,Mn)As films was determined by x-ray diffraction and shown to increase with the increase of Mn composition, x. Well-aligned in-plane ferromagnetic order was observed by magnetization measurements. Magnetotransport measurements revealed the occurrence of anomalous Hall effect in the (Ga,Mn)As layer.

本文言語English
ページ(範囲)363-365
ページ数3
ジャーナルApplied Physics Letters
69
3
DOI
出版ステータスPublished - 1996 7 15

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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