抄録
A systematic study of the optical gain of continuous wave InGaN multiple quantum well laser diode wafers has been made using the variable excitation-stripe length method. Experimental evidence is given of stimulated emission enhanced by resonance between degenerate states and non-degenerate ones, which co-exist in quantum wells having spatial potential undulation due to considerable fluctuation of the InGaN composition.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 97-101 |
| ページ数 | 5 |
| ジャーナル | Semiconductor Science and Technology |
| 巻 | 13 |
| 号 | 1 |
| DOI | |
| 出版ステータス | Published - 1998 1月 1 |
| 外部発表 | はい |
ASJC Scopus subject areas
- 電子材料、光学材料、および磁性材料
- 凝縮系物理学
- 電子工学および電気工学
- 材料化学