Gaas(100) (2 x 4) surface study by molecular beam epitaxy and field-ion-scanning-tunneling-microscopy

Hongwei Xu, Tomihiro Hashizume, Toshio Sakurai

研究成果: Article査読

20 被引用数 (Scopus)

抄録

The GaAs(lOO) (2 x 4) surface was studied by molecular beam epitaxy (MBE) and field-ion-scanning-tunneling-microscopy (FI-STM). The results showed that the GaAs(lOO) (2 x 4) surface unit cell consists of two dimers and two missing dimers of As. The c(2 x 8) reconstruction was observed to originate by the phase shift induced by the As vacancies. We also observed the domain boundaries on the GaAs(lOO) (2 x 4) surface and they were attributed to two dimensional island growth. A structural model was proposed to explain the observed surface reconstructions.

本文言語English
ページ(範囲)1511-1514
ページ数4
ジャーナルJapanese journal of applied physics
32
3 S
DOI
出版ステータスPublished - 1993 3月
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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