(GaAs)//1 /(InAs)//1 SUPERLATTICE SEMICONDUCTOR.

H. Ohno, R. Katsumi, H. Hasegawa

研究成果: Paper査読

抄録

Molecular beam epitaxial growth of (GaAs)//n /(InAs)//n superlattice semiconductors on InP substrates as well as on GaAs substrates is reported. The reflection electron diffraction (RED) pattern was used to monitor the growth process, and was streaky during the growth of (GaAs)//n /(InAs)//n (n equals 1,2) indicating two-dimensional growth. RED intensity oscillations were observed during growth of the superlattice. The successful growth of (GaAs)//n /(InAs)//n on InP substrates was confirmed by X-ray diffraction.

本文言語English
ページ295-301
ページ数7
出版ステータスPublished - 1985
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)

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