GaAs microcrystal growth and its position control by low energy focused ion beam

T. Chikyow, N. Koguchi

研究成果: Conference contribution

抄録

GaAs microcrystal growth and its position control was demonstrated using a low energy focused ion beam system to fabricate the photonic crystals. Due to the rapid progress in ULSI design and the trend in high density packing, in the near future, the Al or Cu based interconnection system will face a difficulty in the signal flow. For this purpose, the photonic crystal and its application to the optical signal transfer system has been intensively studied. In this system, a crucial point is how to fabricate the ordered and controlled structure which has higher dielectric constant. For this system, imbedded GaAs microcrystals in SiO2 are thought to be the best candidate. But the challenging is the position controlling of the GaAs microcrystals. For this purpose, we demonstrate the array of GaAs microcrystals on Si(100) surface with As-termination method.

本文言語English
ホスト出版物のタイトル2002 International Microprocesses and Nanotechnology Conference, MNC 2002
出版社Institute of Electrical and Electronics Engineers Inc.
ページ218-219
ページ数2
ISBN(電子版)4891140313, 9784891140311
DOI
出版ステータスPublished - 2002 1 1
外部発表はい
イベントInternational Microprocesses and Nanotechnology Conference, MNC 2002 - Tokyo, Japan
継続期間: 2002 11 62002 11 8

出版物シリーズ

名前2002 International Microprocesses and Nanotechnology Conference, MNC 2002

Other

OtherInternational Microprocesses and Nanotechnology Conference, MNC 2002
国/地域Japan
CityTokyo
Period02/11/602/11/8

ASJC Scopus subject areas

  • ハードウェアとアーキテクチャ
  • 電子工学および電気工学

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