TY - JOUR
T1 - GaAs micro crystal growth on a As-terminated Si (001) surface by low energy focused ion beam
AU - Chikyo, Toyohiro
AU - Koguchi, Nobuyuki
PY - 1999/1/1
Y1 - 1999/1/1
N2 - Ordered GaAs micro crystal growth on a As-terminated Si (001) surface was demonstrated using a low energy focused ion beam. Si (001) surface was terminated by Arsenic. The surface showed a (2×1) structure with As dimers. The As layer was sputtered periodically with low energy focused Ga ion beam. Supplied Ga atoms migrated on the surface and trapped at the As removed region, forming Ga droplets. GaAs micro crystals were grown from Ga droplets by As molecule supply. The proposed method was shown to be effective as a fabrication method.
AB - Ordered GaAs micro crystal growth on a As-terminated Si (001) surface was demonstrated using a low energy focused ion beam. Si (001) surface was terminated by Arsenic. The surface showed a (2×1) structure with As dimers. The As layer was sputtered periodically with low energy focused Ga ion beam. Supplied Ga atoms migrated on the surface and trapped at the As removed region, forming Ga droplets. GaAs micro crystals were grown from Ga droplets by As molecule supply. The proposed method was shown to be effective as a fabrication method.
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M3 - Conference article
AN - SCOPUS:0032591541
VL - 536
SP - 445
EP - 450
JO - Materials Research Society Symposium - Proceedings
JF - Materials Research Society Symposium - Proceedings
SN - 0272-9172
T2 - Proceedings of the 1998 MRS Fall Meeting - The Symposium 'Advanced Catalytic Materials-1998'
Y2 - 30 November 1998 through 3 December 1998
ER -