GaAs micro crystal growth on a As-terminated Si (001) surface by low energy focused ion beam

Toyohiro Chikyo, Nobuyuki Koguchi

研究成果: Conference article査読

抄録

Ordered GaAs micro crystal growth on a As-terminated Si (001) surface was demonstrated using a low energy focused ion beam. Si (001) surface was terminated by Arsenic. The surface showed a (2×1) structure with As dimers. The As layer was sputtered periodically with low energy focused Ga ion beam. Supplied Ga atoms migrated on the surface and trapped at the As removed region, forming Ga droplets. GaAs micro crystals were grown from Ga droplets by As molecule supply. The proposed method was shown to be effective as a fabrication method.

本文言語English
ページ(範囲)445-450
ページ数6
ジャーナルMaterials Research Society Symposium - Proceedings
536
出版ステータスPublished - 1999 1月 1
外部発表はい
イベントProceedings of the 1998 MRS Fall Meeting - The Symposium 'Advanced Catalytic Materials-1998' - Boston, MA, USA
継続期間: 1998 11月 301998 12月 3

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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