GaAs- and InP-Based High-Electron-Mobility Transistors

研究成果: Chapter

1 被引用数 (Scopus)

抄録

The fundamental aspects and applications of high-electron-mobility transistors (HEMTs) are described. This chapter begins with the history of HEMT development - from GaAs to InP material systems. A major part of this chapter focuses on the InP HEMTs, and narrow-band-gap antimonide-based HEMTs are introduced in the final part as one of the emerging technologies. The first half of the chapter is a tutorial that explains the operation principle, important figure-of-merits, and key fabrication techniques of HEMTs. Subsequently, a section is dedicated to focus on some parasitic phenomena related to the device reliability issues and underlying physics behind them that have been often discussed in journals and conferences. Finally, the chapter concludes with the future challenge and prospects of HEMTs.

本文言語English
ホスト出版物のタイトルComprehensive Semiconductor Science and Technology
出版社Elsevier Inc.
ページ84-113
ページ数30
1-6
ISBN(印刷版)9780444531537
DOI
出版ステータスPublished - 2011 1 1

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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