Fundamental study for solvent growth of silicon carbide utilizing Fe-Si melt

T. Yoshikawa, S. Kawanishi, T. Tanaka

研究成果: Article査読

6 被引用数 (Scopus)

抄録

Fe-Si melt is a candidate for use as an alloy solvent for rapid liquid phase growth of SiC because of the high solubility of carbon in molten iron. In this work, the equilibrium phase relationship between SiC and the liquid phase of the Fe-Si-C system was investigated at 1523 K by the phase equilibration technique, and was further studied with the thermodynamic calculation. It was found that Fe- 36 mol% Si melt equilibrates with SiC at the temperature and possesses the higher carbon solubility than silicon-based melt. The first trial of the SiC crystal growth experiment was then carried out with Fe- 36 mol% Si melt by means of temperature difference method, and formation of SiC layer was obtained on the graphite substrate. Accordingly, it was found possibility for rapid growth of SiC by the solvent growth method with Fe- 36 mol% Si melt.

本文言語English
論文番号012022
ジャーナルJournal of Physics: Conference Series
165
DOI
出版ステータスPublished - 2009
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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