Fully CMOS-Compatible Wafer Bonding Based on Press Marking Using Thick Electroplated Aluminum

Muhammad Salman Al Farisi, Takashiro Tsukamoto, Shuji Tanaka

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

Aluminum has a great potential as a wafer bonding material due to its inherent compatibility with the complimentary metal oxide semiconductor (CMOS) processes. In this study, a novel wafer bonding technique for heterogeneous integration using electroplated Al bonding frame is demonstrated for the first time. The Al frames were deposited by electroplating from a chloroaluminate ionic liquid. The electroplated Al bonding frames were mechanically deformed by the groove structures on the counter wafer, i.e. press marking. Such a large mechanical deformation enabled the wafer bonding at a temperature of as low as 250°C, which is the lowest value that has ever been reported for the Al bonding. The influence of the bonding temperature to the quality of the bonded substrates were evaluated. The bonding shear strength of 8-100 MPa was obtained, which is in par with the other established techniques.

本文言語English
ホスト出版物のタイトル21st International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2021
出版社Institute of Electrical and Electronics Engineers Inc.
ページ1138-1141
ページ数4
ISBN(電子版)9781665412674
DOI
出版ステータスPublished - 2021 6月 20
イベント21st International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2021 - Virtual, Online, United States
継続期間: 2021 6月 202021 6月 25

出版物シリーズ

名前21st International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2021

Conference

Conference21st International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2021
国/地域United States
CityVirtual, Online
Period21/6/2021/6/25

ASJC Scopus subject areas

  • 電子工学および電気工学
  • 機械工学
  • 制御と最適化
  • 器械工学

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