Fullerene (C60) adsorption on Si surfaces

T. Sakurai, X. D. Wang, T. Hashizume, Y. Nishina, H. Shinohara, Y. Saito

    研究成果: Article査読

    11 被引用数 (Scopus)

    抄録

    Field ion-scanning tunneling microscopy (FI-STM) was employed to characterize the adsorption behavior of fullerenes on the Si(111)7 × 7 and Si(100)2 × 1 surfaces. On the Si(111)7 × 7 surface, C60 adsorbs preferentially on the faulted half of the 7 × 7 unit and stays still without rotation at room temperature, implying a reasonably strong interaction with the Si substrate. The C60 molecules reside stably also at room temperature without rotation on the Si(100) surface. For the first and second layers on the Si(100) surface, only local ordering of square and quasi-hexagonal patterns was observed. The orderly Stranski-Krastanov mode island formation with hexagonal packing was observed above the third layer on the Si(100)2 × 1 surface.

    本文言語English
    ページ(範囲)281-285
    ページ数5
    ジャーナルApplied Surface Science
    67
    1-4
    DOI
    出版ステータスPublished - 1993 4 2

    ASJC Scopus subject areas

    • 化学 (全般)
    • 凝縮系物理学
    • 物理学および天文学(全般)
    • 表面および界面
    • 表面、皮膜および薄膜

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