Scanning tunneling microscopy (STM) was used to study the C 60 adsorption on the Si rich (3×3) and C rich (√3×√3) surface of 6H-SiC(0001). At room temperature, triangular or hexagonal islands commensurating to the substrate structure at submonolayer coverages were observed. One of the interesting observations was the nucleation of the second layer of the C 60 molecules even at submonolayer coverages. On the (3×3) surface, multilayer growth of C 60 with the close-packed fcc(111) structure was observed: while on the (√3×√3) surface, for coverage higher than 1 ML, disordered surface morphology was observed. Epitaxial growth of SiC was also achieved using C 60 as carbon source on 6H-SiC(0001) surfaces.
|ジャーナル||Journal De Physique. IV : JP|
|出版ステータス||Published - 1996 9 1|
|イベント||Proceedings of the 1996 43rd International Field Emission Symposium, IFES'96 - Moscow, Russia|
継続期間: 1996 7 14 → 1996 7 19
ASJC Scopus subject areas
- Physics and Astronomy(all)