抄録
The present paper is based on the contribution by Niihara and his co-workers devoted to indentation testing of ceramic materials, while it provides new observations of peculiarities registered during nanoindentation of sapphire, GaAs and InGaNAs deposited by MBE-technique. Exploiting previous studies of the spherical indentation in sapphire, the present authors recognized different causes that result in the apparently similar pop-in phenomenon for sapphire and GaAs-based semiconductors. The finite element modeling of the quasi-plastic nanoindentation of the (1120) plane of sapphire with the elastically deformable tip confirmed that the deformation of sapphire is governed by twinning which causes pop-in phenomenon, as suggested earlier by Niihara et al. The singularities registered for GaAs-based crystals are associated with dislocation movement within {111} slip bands, which is in contrast to the case of sapphire.
本文言語 | English |
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ページ(範囲) | 293-296 |
ページ数 | 4 |
ジャーナル | Key Engineering Materials |
巻 | 317-318 |
DOI | |
出版ステータス | Published - 2006 |
ASJC Scopus subject areas
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering