Frequency response of common lead and shield type magnetic tunneling junction head

K. Shimazawa, J. J. Sun, N. Kasahara, K. Sato, T. Kagami, S. Saruki, O. Redon, Y. Fujita, T. Umehara, J. Syoji, S. Araki, M. Matsuzaki

研究成果: Conference article査読

17 被引用数 (Scopus)

抄録

In this work, the frequency response in magnetic tunnel junction (MTJ) heads was studied. Both stray capacitance and junction resistance, forming a low-pass-filter, have to be reduced to improve the cutoff frequency in MTJ heads. By employing an Ar gas cluster ion beam (GCIB) process, junctions grown on the magnetic shield show a resistance area product as low as 3.6 Ωμm2 and tunneling magneto-resistance over 14%. The dominant capacitance in common lead and shield MTJ heads was found mainly resulting from the shield-to-shield spacing, whose capacitance can be reduced by using an SiO2 gap layer instead of Al2O3 layer and thus leading to an improved frequency response. Simple analysis indicates that a read amplifier design with low impedance could be helpful to realize a high data transfer rate, and a rate of around 800 Mbps for 100 Gbits/in2 recording system can be thus expected.

本文言語English
ページ(範囲)1684-1686
ページ数3
ジャーナルIEEE Transactions on Magnetics
37
4 I
DOI
出版ステータスPublished - 2001 7
外部発表はい
イベント8th Joint Magnetism and Magnetic Materials -International Magnetic Conference- (MMM-Intermag) - San Antonio, TX, United States
継続期間: 2001 1 72001 1 11

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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