In this work, the frequency response in magnetic tunnel junction (MTJ) heads was studied. Both stray capacitance and junction resistance, forming a low-pass-filter, have to be reduced to improve the cutoff frequency in MTJ heads. By employing an Ar gas cluster ion beam (GCIB) process, junctions grown on the magnetic shield show a resistance area product as low as 3.6 Ωμm2 and tunneling magneto-resistance over 14%. The dominant capacitance in common lead and shield MTJ heads was found mainly resulting from the shield-to-shield spacing, whose capacitance can be reduced by using an SiO2 gap layer instead of Al2O3 layer and thus leading to an improved frequency response. Simple analysis indicates that a read amplifier design with low impedance could be helpful to realize a high data transfer rate, and a rate of around 800 Mbps for 100 Gbits/in2 recording system can be thus expected.
|ジャーナル||IEEE Transactions on Magnetics|
|出版ステータス||Published - 2001 7|
|イベント||8th Joint Magnetism and Magnetic Materials -International Magnetic Conference- (MMM-Intermag) - San Antonio, TX, United States|
継続期間: 2001 1 7 → 2001 1 11
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