Frequency performance of plasma wave devices for thz applications and the role of fringing effects

Irina Khmyrova, Takuya Nishimura, Nobuhiro Magome, Tetsuya Suemitsu, Taiichi Otsuji

研究成果: Conference contribution

抄録

Paper is focused on the model in which reduction of resonant frequency of plasma oscillations in the HEMT channel experimentally observed is associated with the gate contact fringing effects. Sheet electron density distribution in the fringed ungated channel region and expression for the resonant plasma frequency are obtained. Cascaded transmission line equivalent circuit model accounting for both gated and fringed ungated channel regions has been developed and used for simulation of HEMT frequency performance with IsSpice software.

本文言語English
ホスト出版物のタイトル2008 IEEE 25th Convention of Electrical and Electronics Engineers in Israel, IEEEI 2008
ページ650-653
ページ数4
DOI
出版ステータスPublished - 2008 12 1
イベント2008 IEEE 25th Convention of Electrical and Electronics Engineers in Israel, IEEEI 2008 - Eilat, Israel
継続期間: 2008 12 32008 12 5

出版物シリーズ

名前IEEE Convention of Electrical and Electronics Engineers in Israel, Proceedings

Other

Other2008 IEEE 25th Convention of Electrical and Electronics Engineers in Israel, IEEEI 2008
CountryIsrael
CityEilat
Period08/12/308/12/5

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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